Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices (Crystal Research and Technology 5/2023)

Crystal Research and TechnologyVolume 58, Issue 5 2370009 Cover PictureFree Access Development of Large-Diameter Very High Purity Ge Growth Technology for Devices (Crystal 5/2023) First published: 12 May 2023 https://doi.org/10.1002/crat.202370009AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text full-text accessPlease review our Terms Conditions Use check box below share version article.I have read accept the Wiley Online Library UseShareable LinkUse link a this article with your friends colleagues. Learn more.Copy URL Graphical Abstract A 3-inch diameter, 3-kg mass, high-purity germanium crystal is grown net free carrier concentration equivalent one part per trillion dislocation density (EPD values) 103−104 cm2. Usually, such single crystals these dimensions are prerequisite fabricate larger detectors “rare events” like neutrinoless double beta decay (0νββ) dark-matter studies understand origin constituents Universe. For further details on growth crystal, see number 2200286 by Rajappan Radhakrishnan Sumathi co-workers. Volume58, Issue5May 20232370009 RelatedInformation